报告主题：半导体场发射电子源在传感器与X射线源中的应用
Semiconductor Field Emission Electron Source for application in Sensors and X-ray Sources
报告人：Rupert Schreiner 教授（德国雷根斯堡应用科技大学）
报告时间：2018年5月18日 上午10：00
报告地点：光电一楼报告厅
报告内容：
Semiconductor field emitter arrays are suitable candidates for applications which require a very stable field emission (FE) current and a high emission uniformity over the entire emission area. By using various semiconductor materials, doping profiles, geometries and coatings of the apex it is possible to vary the emission characteristics of these cathodes within a wide range. Each specific application requires its own optimized design for the cathode as well as for the other parts of the FE electron source. To meet as many of these requirements as possible while using only a limited number of different prefabricated components, we established a modular system concept for our FE electron source. It consists of a semiconductor cathode (with an optional integrated gate electrode) and a grid electrode (metallized silicon nitride membrane). For pre-characterization of the FE electron source, an UHV measurement system is used. An anode is mounted on a movable isolated cantilever and is placed at a defined distance over the extraction grid. Different cathode, gate, grid and anode potentials can be chosen while the corresponding currents are monitored. In addition to the integral FE measurement, the emission characteristics of individual tips out of various cathode materials and using different geometries (e.g. black Si) were investigated by means of FE scanning microscopy. For the actual device application (e.g. vacuum sensor or x-ray source), the electron source can be directly integrated and characterized in the complete system without any further modification.
报告人简介：
Prof. Dr. Rupert Schreiner was born in Grafenau, Germany in 1971. He studied physics in Munich (Germany), Dublin (Ireland), Regensburg (Germany), and Stuttgart (Germany). He received the M.Sc. degree in physics from the University of Regensburg, Regensburg, Germany, in 1997 and the Ph.D. degree from Stuttgart University, Stuttgart, Germany, in 2002. At the Microstructure Laboratory, Stuttgart University, he started research on InGaAs(P)/InP semiconductor lasers. In 2001 he joined Infineon Technologies, Munich, Germany, to work on optoelectronic microsystems. Between 2004 and 2005 he was appointed as CTO of Parolink Technologies in Hsinchu Science Park (Taiwan). 2005 and 2006 he was project manager in the Technology Transfer of Infineon from Villach (Austria) to Kulim (Malaysia). Since 2006 he is Professor of Applied Physics at the Faculty of Microsystems Technology at the Ostbayerische Technische Hochschule (OTH) in Regensburg, Germany. His major research interests are microsystems, microsensors and optoelectronics. Dr. Schreiner is a member of the German Physical Society.